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| LESHAN RADIO COMPANY, LTD. General Purpose Amplifier NPN Silicon Transistor This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-723 package which is designed for low power surface mount applications, where board space is at a premium. * Reduces Board Space * High hFE, 210 -460 (typical) * Low VCE(sat), < 0.5 V * ESD Performance: Human Body Model; u 2000 V, Machine Model; u 200 V * Available in 8 mm, 7-inch/3000 Unit Tape and Reel * This is a Pb-Free Device L2SC5658M3T5G 3 2 1 SOT-723 3 COLLECT OR 1 B ASE MAXIMUM RATINGS (TA = 25C) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC Value 50 50 5.0 100 Unit Vdc Vdc Vdc mAdc XX M 2 EMIT T ER MARKING DIAGRAM THERMAL CHARACTERISTICS Rating Power Dissipation (Note 1) Junction Temperature Storage Temperature Range Symbol PD TJ Tstg Max 260 150 -55 ~ + 150 Unit mW C C XX = Specific Device Code M = Date Code ORDERING INFORMATION Device L2SC5658M3T5G Package SOT-723 Shipping 3000/Tape & Reel 1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. Version 1.0 L2SC5658M3T5G-1/4 LESHAN RADIO COMPANY, LTD. L2SC5658M3T5G ELECTRICAL CHARACTERISTICS (TA = 25C) Characteristic Collector-Base Breakdown Voltage (IC = 50 mAdc, IE = 0) Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Emitter-Base Breakdown Voltage (IE = 50 mAdc, IE = 0) Collector-Base Cutoff Current (VCB = 30 Vdc, IE = 0) Emitter-Base Cutoff Current (VEB = 4.0 Vdc, IB = 0) Collector-Emitter Saturation Voltage (Note 2) (IC = 60 mAdc, IB = 5.0 mAdc) DC Current Gain (Note 2) (VCE = 6.0 Vdc, IC = 1.0 mAdc) Transition Frequency (VCE = 12 Vdc, IC = 2.0 mAdc, f = 30 MHz) Output Capacitance (VCB = 12 Vdc, IC = 0 Adc, f = 1.0 MHz) 2. Pulse Test: Pulse Width 300 ms, D.C. 2%. Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) - hFE 120 fT COB - - - 180 2.0 560 - - MHz pF - 0.4 - Min 50 50 5.0 - - Typ - - - - - Max - - - 0.5 0.5 Unit Vdc Vdc Vdc mA mA Vdc Version 1.0 L2SC5658M3T5G-2/4 LESHAN RADIO COMPANY, LTD. TYPICAL ELECTRICAL CHARACTERISTICS 60 IC, COLLECTOR CURRENT (mA) 50 40 30 20 10 0 0 2 4 6 VCE, COLLECTOR VOLTAGE (V) TA = 25C 160 mA 140 mA DC CURRENT GAIN 120 mA 100 mA 80 mA 60 mA 40 mA IB = 20 mA 8 10 0.1 1 TA = 75C TA = - 25C 100 1000 TA = 25C L2SC5658M3T5G VCE = 10 V 10 100 IC, COLLECTOR CURRENT (mA) Figure 1. IC - VCE 2 TA = 25C COLLECTOR VOLTAGE (mV) 1.5 900 800 700 600 500 400 300 200 100 0 0.01 0.1 1 IB, BASE CURRENT (mA) 10 100 0 0.2 0.5 1 Figure 2. DC Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (V) 1 0.5 TA = 25C VCE = 5 V 5 10 20 40 60 80 100 150 200 IC, COLLECTOR CURRENT (mA) Figure 3. Collector Saturation Region 20 Cib, INPUT CAPACITANCE (pF) 18 16 14 12 10 7 6 Cob, CAPACITANCE (pF) 5 4 3 2 0 1 2 VEB (V) 3 4 1 0 Figure 4. On Voltage 10 20 VCB (V) 30 40 Figure 5. Capacitance Figure 6. Capacitance Version 1.0 L2SC5658M3T5G-3/4 LESHAN RADIO COMPANY, LTD. L2SC5658M3T5G PACKAGE DIMENSIONS SOT-723 -X- D b1 -Y- 3 A E 1 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. L C HE e b 2X 0.08 (0.0032) X Y PIN 1. BASE 2. EMITTER 3. COLLECTOR DIM A b b1 C D E e HE L MILLIMETERS MIN NOM MAX 0.45 0.50 0.55 0.15 0.20 0.27 0.25 0.3 0.35 0.07 0.12 0.17 1.15 1.20 1.25 0.75 0.80 0.85 0.40 BSC 1.15 1.20 1.25 0.15 0.20 0.25 INCHES MIN NOM MAX 0.018 0.020 0.022 0.0059 0.0079 0.0106 0.010 0.012 0.014 0.0028 0.0047 0.0067 0.045 0.047 0.049 0.03 0.032 0.034 0.016 BSC 0.045 0.047 0.049 0.0059 0.0079 0.0098 SOLDERING FOOTPRINT 0.40 0.0157 0.40 0.0157 1.0 0.039 0.40 0.0157 0.40 0.0157 0.40 0.0157 mm inches Version 1.0 L2SC5658M3T5G-4/4 |
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